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NTE2379 MOSFET N-Channel, Enhancement Mode High Speed Switch
Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Drain Current, ID Continuous (VGS = 10V) TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Gate Current (Pulsed), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 570mJ Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V/ns Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Maximum Lead Temperature (During Soldering, 1/16" from case, 10sec), TL . . . . . . . . . . . . +300C Thermal Resistance: Maximum Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W Typical Case-to-Sink (Mounting surface flat, smooth, and greased), RthCS . . . . . . 0.5C/W Maximum Junction-to-Ambient (Free Air Operation), RthJA . . . . . . . . . . . . . . . . . . . . 62C/W Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 2. VDD = 50V, starting TJ = +25C, l = 27mH, RG = 25, IAS = 6.2A. Note 3. ISD 6.2A, di/dt 80A/A, VDD V(BR)DSS, TJ +150C.
Electrical Characteristics: (TJ = +25C unless otherwise specified)
Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage Forward Gate-Source Leakage Reverse Drain-Source Leakage Current Symbol BVDSS VGS(th) IGSS IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS IS ISM VSD trr Qrr ton Between lead, 6mm (.250 in) from package and center of die contact VGS = 10V, ID = 6.2A, VDS = 360V VDD = 300V, ID = 6.2A, RG = 9.1, RD = 47, Note 4 Test Conditions VGS = 0V, ID = 250A VDS = VGS, ID = 250A VGS = 20V VGS = -20V VDS = 600V, VGS = 0 VDS = 480V, VGS = 0, TC = +150C Static Drain-Source ON Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Internal Drain Inductance Internal Source Inductance VGS = 10V, ID = 3.7A, Note 4 VDS 100V, ID = 3.7A, Note 4 VGS = 0V, VDS = 25V, f = 1MHz Min 600 2.0 - - - - - 4.7 - - - - - - - - - - - - Typ - - - - - - - - 1300 160 30 32 18 55 20 - - - 4.5 7.5 Max - 4.0 100 -100 100 500 1.2 - - - - - - - - 60 8.3 30 - - Unit V V nA nA A A mhos pF pF pF ns ns ns ns nC nC nC nH nH
Source-Drain Diode Ratings and Characteristics Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time (Body Diode) (Body Diode) Note 1 TJ = +25C, IS = 6.2A, VGS = 0V, Note 4 TJ = +25C, IF = 6.2A, di/dt = 100A/s, Note 4 - - - - - - - - 450 3.8 6.2 25 1.5 940 7.9 A A V ns C
Intrinsic turn-on time is neglegible (turn-on is dominated by LS + LD)
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
.420 (10.67) Max .110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max
Gate .100 (2.54)
Source Drain/Tab

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